Transport properties of silicon doped n-indium selenide
Identifieur interne : 000294 ( Main/Exploration ); précédent : 000293; suivant : 000295Transport properties of silicon doped n-indium selenide
Auteurs : RBID : ISTEX:339_1992_Article_BF00324166.pdfEnglish descriptors
Abstract
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
DOI: 10.1007/BF00324166
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Segura</name><affiliation wicri:level="1"><mods:affiliation>Departmento de Física Aplicada, Facultad de Física, Universidad de Valencia, E-46100, Burjassot (Valencia), Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departmento de Física Aplicada, Facultad de Física, Universidad de Valencia, E-46100, Burjassot (Valencia)</wicri:regionArea><wicri:noRegion>Burjassot (Valencia)</wicri:noRegion></affiliation></author><author><name>A. Chevy</name><affiliation wicri:level="3"><mods:affiliation>Laboratoire de Physique des Milieux Condensés, Université de Paris VI, 4 place Jussieu, Tour 13, F-75005, Paris, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Milieux Condensés, Université de Paris VI, 4 place Jussieu, Tour 13, F-75005, Paris</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1992_Article_BF00324166.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF00324166</idno><idno type="wicri:Area/Main/Corpus">000647</idno><idno type="wicri:Area/Main/Curation">000647</idno><idno type="wicri:Area/Main/Exploration">000294</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.55.—i</term><term>72.20.—i</term><term>73.20.Dx</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="70190ea7664a3539452dee3a4a7e27b27ea7d726"><titleInfo lang="eng"><title>Transport properties of silicon doped n-indium selenide</title></titleInfo><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Riera</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departmento de Física Aplicada, Facultad de Física, Universidad de Valencia, E-46100, Burjassot (Valencia), Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departmento de Física Aplicada, Facultad de Física, Universidad de Valencia, E-46100, Burjassot (Valencia), Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique des Milieux Condensés, Université de Paris VI, 4 place Jussieu, Tour 13, F-75005, Paris, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Solids And Materials</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1991-12-23</dateCreated><dateCaptured encoding="w3cdtf">1992-02-19</dateCaptured><dateValid encoding="w3cdtf">2004-08-27</dateValid><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. 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A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1992</partNumber><partNumber>Volume: 54</partNumber><partNumber>Number: 5</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1992-05-01</dateIssued><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Condensed Matter and Material Sciences</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Semiconductors</topic><topic>Micro- and Nanosystems</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 14</identifier><recordInfo><recordOrigin>Springer-Verlag, 1992</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00324166</identifier><identifier type="matrixNumber">Art6</identifier><identifier type="local">BF00324166</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>428</start><end>430</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1992</recordOrigin><recordIdentifier>339_1992_Article_BF00324166.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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